Silicon Epitaxial Planar Diode

FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

High Conductance Fast Diode

General Description The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. Features • 500 milliwatt Power Dissipation package. • Fast Switching Spee

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low leakage * Low forward voltage * High speed switching * High current capability * High reliability * Low power loss, high efficiency

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34

SILICON EPITAXIAL PLANAR DIODES

Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.

FAST SWITCHING DIODE

Features ● Fast Switching Speed ● Suitable for General Logic Applications ● High Conductance ● Available in Surface Mount Version (LL4154)

500mW 35 Volt Silicon Epitaxial Diode

Features ● Planar Passivated ● Metallurgically bonded Construction ● Moisture Sensitivity Level 1

COMPUTER DIODE Switching

COMPUTER DIODE Switching

silicon diode

SILICON DIODE

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 2 ns • Reverse voltage:max. 25 V • Repetitive peak reverse voltage:max. 35 V • Pb / RoHS Free

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE: 25 V CURRENT: 0.15 A FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation

ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES

ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES • C ... 4pF @ VR = 0, f = 1.0 MHz • trr ... 2.0 ns @ IF = 10 mA, VR = -6.0 V, RL = 100 Ω

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES for general purpose and switching

SILICON EPITAXIAL PLANAR DIODE

Silicon Expitxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also avaible in glass case DO-34

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 2 ns • Reverse voltage:max. 25 V • Repetitive peak reverse voltage:max. 35 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g

SILICON SWITCHING DIODES

DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4151 Series types are Hermetically Sealed Silicon Diodes Designed for fast switching applications.

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE: 25 V CURRENT: 0.15 A FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation

SWITCHING RECTIFIER

SWITCHING RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

150mA Axial Leaded Fast Switching Diode

Features ● Fast Switching Speed ● Suitable for General Logic Applications ● High Conductance ● Available in Surface Mount Version (LL4154)

Small Signal Fast Switching Diodes

FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

35V Detection switch tube

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Diode Data

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Small Signal Fast Switching Diodes

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500mW Silicon Switching Diode

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封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 35V 100MA DO35 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AH，DO-35，轴向 包装：管件 描述：DIODE GEN PURP 35V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单

Diode 35V, 200mA Through Hole DO-204AH (DO-35)

High Conductance Fast Diode

Small Signal Switching Diodes

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Small Signal Fast Switching Diodes

FEATURES • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

Computer Switching Diode

DESCRIPTION These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These small low capacitance diodes, with very fast switching speeds, are hermetically sealed and bonded into a dou

Small Signal Fast Switching Diodes

FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

SMALL SIGNAL SWITCHING DIODES

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High Conductance Fast Diode

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Small Signal Fast Switching Diodes

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Signal or Computer Diode