HIGHSPEEDSWITCHINGDIODE

PRV:100Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree MECHANICALDATA: Case:DO-34GlassCase Weight:approx.0.093g

HIGHSPEEDSWITCHINGDIODE

PRV:100Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree MECHANICALDATA: Case:DO-34GlassCase Weight:approx.0.093g

1N4148S

■Features ●FastSwitchingSpeed ●ForGeneralPurposeSwitchingApplications ●HighConductance

High-speeddiodes

DESCRIPTION The1N4148,1N4446,1N4448arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinhermeticallysealedleadedglassSOD27(DO-35)packages. FEATURES •Hermeticallysealedleadedglass SOD27(DO-35)package •Highswitchingspeed:max.4ns •Genera

Switchingdiode

Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching

SMALL-SIGNALSWITCHINGDIODE

FASTSWITCHINGDIODE

Features ●FastSwitchingSpeed ●GlassPackageVersionforHighReliability ●HighConductance ●AvailableinBothThrough-HoleandSurface MountVersions

SIGNALDIODE

文件：11.67 Kbytes Page：1 Pages

200mAMP75VOLTS5nsecHYPERFASTRECTIFIER

FEATURES: •HyperFastRecovery:5nsecmaximum •SubminiatureSurfaceMountPackage •RoundTabMounting(SquareTabsAvailable) •HermeticallySealed •PlanarPassivatedChip •ForHighEfficiencyApplications •TX,TXV,andSpaceLevelScreeningAvailable