VC-EMV-KV-PG21( 9-13/ 9,5)

文件：79.73 Kbytes Page：3 Pages

包装：散装 描述：PG21 CABLE CLAMP 连接器，互连器件 重型连接器配件

VC-EMV-KV-PG21( 9-13/12) - 电缆密封

包装：散装 描述：CABLE GLAND 连接器，互连器件 重型连接器配件

Cable gland - VC-EMV-KV-PG21( 9-13/12)

文件：50.54 Kbytes Page：3 Pages

Sleeve housing - VC-K4/5M-SET

文件：46.16 Kbytes Page：1 Pages

VC-EMV-KV-PG21(11,5-15,5/13,5)

文件：79.43 Kbytes Page：3 Pages

VC-EMV-KV-PG21(11,5-15,5/13,5) - 电缆密封

VC-EMV-KV-PG21(14-18/14,5) - 电缆密封

Cable gland - VC-EMV-KV-PG21(14-18/14,5)

文件：49.02 Kbytes Page：2 Pages

Sleeve housing - VC-M2/3M-SET

文件：50.12 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

CSD18542KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

60V N-Channel NexFET Power MOSFET

文件：468.71 Kbytes Page：11 Pages