P.C. BOARD MOUNT AUDIO TRANSFORMERS

文件：395.74 Kbytes Page：2 Pages

LOW PROFILE - P.C. BOARD MOUNT AUDIO TRANSFORMERS

文件：376.28 Kbytes Page：2 Pages

包装：散装 描述：TRANSFORMER AUDIO 1.2KCT/8 IMPED 变压器 音频变压器

Absolute, Differential, Gage, Vacuum Gage/Amplified

FEATURES • PCB terminal on opposite side from the ports • Fully signal conditioned

Absolute, Differential, Gage, Vacuum Gage/Amplified

FEATURES • PCB terminal on opposite side from the ports • Fully signal conditioned

Interactive Catalog Replaces Catalog Pages

文件：383.72 Kbytes Page：5 Pages

Signal conditioned precision pressure transducers

文件：116.34 Kbytes Page：4 Pages

Signal conditioned precision pressure transducers

文件：109.36 Kbytes Page：3 Pages

Signal conditioned precision pressure transducers

文件：109.36 Kbytes Page：3 Pages

压力传感器

封装/外壳：3-SIP 模块 包装：托盘 描述：SENSOR VACUUM GAUGE 5 PSI 传感器，变送器 压力传感器、变送器

Interactive Catalog Replaces Catalog Pages

文件：383.72 Kbytes Page：5 Pages

Signal conditioned precision pressure transducers

文件：116.34 Kbytes Page：4 Pages

Signal conditioned precision pressure transducers

文件：109.36 Kbytes Page：3 Pages

压力传感器

Signal conditioned precision pressure transducers

文件：116.34 Kbytes Page：4 Pages

Signal conditioned precision pressure transducers

文件：109.36 Kbytes Page：3 Pages

压力传感器

Interactive Catalog Replaces Catalog Pages

文件：383.72 Kbytes Page：5 Pages

Signal conditioned precision pressure transducers

文件：109.36 Kbytes Page：3 Pages

Signal conditioned precision pressure transducers

文件：116.34 Kbytes Page：4 Pages

Signal conditioned precision pressure transducers

文件：109.36 Kbytes Page：3 Pages

Signal conditioned precision pressure transducers

文件：116.34 Kbytes Page：4 Pages

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP