型号 功能描述 生产厂家 企业 LOGO 操作

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.06718 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

STMICROELECTRONICS

意法半导体

丝印代码:D2PAK;Isc N-Channel MOSFET Transistor

文件:289.83 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2026-3-11 17:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO220-3
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST/意法
2450+
TO220F
8540
只做原装正品假一赔十为客户做到零风险!!
JST
2026+
N/A
200000
专注连接器,连接一切可能
ST
22+
TO-220F
8000
原装正品支持实单
ST
23+
TO-220F
16900
正规渠道,只有原装!
ST
26+
TO-220
86720
全新原装正品价格最实惠 假一赔百
ST
17+
TO220
496
全新 发货1-2天
JST/日压
22+
连接器
728922
代理-优势-原装-正品-现货*期货
ST
26+
TO-220F
60000
只有原装 可配单
UTC/友顺
23+
TO-220
6800
专注配单,只做原装进口现货

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