型号 功能描述 生产厂家 企业 LOGO 操作

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

 DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power

UTC

友顺

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET

Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

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ISC

无锡固电

isc N-Channel Mosfet Transistor

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ISC

无锡固电

更新时间:2026-3-16 8:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
22+
TO-220F
8000
原装正品支持实单
JST
2026+
N/A
200000
专注连接器,连接一切可能
ST
24+
TO220-3
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
UTC
2450+
TO-220WF
9850
只做原装正品现货或订货假一赔十!
JST/日压
22+
连接器
728922
代理-优势-原装-正品-现货*期货
ST
26+
TO-220
86720
全新原装正品价格最实惠 假一赔百
ST
20+
220F-220
38560
原装优势主营型号-可开原型号增税票
UTC
25+
TO-220F1
20000
原装正品价格优惠,志同道合共谋发展
UTC
1813+
TO220F
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2022+
TO-220
50000
原厂代理 终端免费提供样品

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