| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 |   | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power | UTC 友顺 | | ||
N-channel 600 V, 0.320 廓, 10 A PowerFLAT??(8x8) HV MDmesh??II Power MOSFET Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.06718 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab | STMICROELECTRONICS 意法半导体 | | ||
Isc N-Channel MOSFET Transistor 文件：289.83 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
TO-220WF |
100000 |
原装现货 |
|||
ST |
22+ |
TO-220F |
8000 |
原装正品支持实单 |
|||
ST/意法 |
24+ |
NA/ |
270 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
TO-220F |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
23+ |
TO-263 |
21840 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
UCT/友顺 |
24+ |
TO-220F2 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
ST |
25+ |
TO-220F |
16900 |
原装，请咨询 |
|||
ST |
20+ |
220F-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
UTC/友顺 |
25+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
2023+ |
8700 |
原装现货 |
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DdatasheetPDF页码索引
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