型号 功能描述 生产厂家&企业 LOGO 操作

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-Channel650V(D-S)PowerMOSFET

文件:1.06718 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

IscN-ChannelMOSFETTransistor

文件:289.83 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
更新时间:2024-5-11 19:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
1906+
220F-220
270
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
20+
220F-220
38560
原装优势主营型号-可开原型号增税票
ST
23+
TO220-3
20000
原厂原装正品现货
UTC
21+
TO-220F1
20000
原装正品价格优惠,志同道合共谋发展
ST
2023+
TO220-3
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
ST
TO-220
608900
原包原标签100%进口原装常备现货!
ST
22+
TO-220F
8000
原装正品支持实单
ST
1926+
TO-220F
6852
只做原装正品现货!或订货假一赔十!
ST
22+
TO-220F
16900
正规渠道,只有原装!
ST(意法)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!

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