Bipolar Junction Transistor

FEATURES ● Intergrated antiparallel collector-emitter diode ● Features of good high temperature ● High switching speed APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast， etc

低反压集成二极管系列（Bvceo<300V）

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Contr

POWER TRANSISTORS(8A,300-400V,80W)

8 AMPERE POWER TRANSISTORS 300 - 400 VOLTS 80 WATTS

POWER TRANSISTORS(8A,400V,80W)

SWIRCHMODE SERIES NPN POWER TRNASISTOR designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching requlators, inverters, DC-DC converter, Motor Controls, Solenoid drive and Deflec

POWER TRANSISTOR

The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. • VCEO

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.