30 AMP EPION II HIGH SPEED RECTIFIER 50-150 VOLTS

FEATURES ● RADIATION TOLERANT ● ULTRA FAST RECOVERY 50 NSEC MAX ● REVERSE VOLTAGE UP TO 150 VOLTS ● VERY LOW FORWARD VOLTAGE DROP 450 MV AVERAGE ● LOW REVERSE LEAKAGE ● HERMETICALLY SEALED ● SINGLE CHIP CONSTRUCTION ● 200°C OPERATING

30 AMP EPION II HIGH SPEED RECTIFIER 50-150 VOLTS

FEATURES ● RADIATION TOLERANT ● ULTRA FAST RECOVERY 50 NSEC MAX ● REVERSE VOLTAGE UP TO 150 VOLTS ● VERY LOW FORWARD VOLTAGE DROP 450 MV AVERAGE ● LOW REVERSE LEAKAGE ● HERMETICALLY SEALED ● SINGLE CHIP CONSTRUCTION ● 200°C OPERATING

30 AMP EPION II HIGH SPEED RECTIFIER 50-150 VOLTS

FEATURES ● RADIATION TOLERANT ● ULTRA FAST RECOVERY 50 NSEC MAX ● REVERSE VOLTAGE UP TO 150 VOLTS ● VERY LOW FORWARD VOLTAGE DROP 450 MV AVERAGE ● LOW REVERSE LEAKAGE ● HERMETICALLY SEALED ● SINGLE CHIP CONSTRUCTION ● 200°C OPERATING

Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc?

Features (1) For equipment designed to conform EMI regulations such as VCCI, CISPR, FCC, VDE, etc. (2) Attenuation effect against high voltage pulse noise (3) Attenuates conductive emission from power supply (4) Leakage current: 1mA max. (250V, 60Hz) (5) High shielded effect (covered by metal

丝印代码：ZN；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Small

丝印代码：ZS；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Small

1 AND 2 WATT DC/DC CONVERTERS

[Reliability Incorporated.] 1 & 2 Watts DC/DC Converters