1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Trench MOSFET technology

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2)

3. Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portable devices

• Hard disk and computing power management