包装：散装 描述：DIE RD 1.250 工具 专用工具

ALUMINUM POLYMER CAPACITORS

Radial lead aluminum polymer capacitors

文件：127.05 Kbytes Page：1 Pages

Small Size - High Temperature ??Low ESR ??High Ripple Current ??Stable with Temperature ??High Frequency

文件：312.83 Kbytes Page：2 Pages

Highest capacitance & Voltage

文件：193.35 Kbytes Page：2 Pages

Small Size - High Temperature ??Low ESR ??High Ripple Current ??Stable with Temperature ??High Frequency

文件：312.83 Kbytes Page：2 Pages

包装：散装 描述：DIE-RD 1.250 COND PKGD 工具 压接器 - 压头，模具组，成套模具

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

文件：49.24 Kbytes Page：2 Pages