SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

SCHOTTKY RECTIFIER

文件：99.58 Kbytes Page：5 Pages

Unique high power, Half-Pak module

文件：223.33 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

文件：99.58 Kbytes Page：5 Pages

120 Amp Schottky Rectifier

文件：117.28 Kbytes Page：2 Pages

SCHOTTKY RECTIFIER

文件：223.33 Kbytes Page：4 Pages

封装/外壳：HALF-PAK 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 120A PRM1-1 分立半导体产品 二极管 - 整流器 - 单

功率模块

封装/外壳：HALF-PAK 包装：卷带（TR） 描述：DIODE SCHOTTKY 35V 120A PRM1-1 分立半导体产品 二极管 - 整流器 - 单

Unique high power, Half-Pak module

文件：223.33 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：223.33 Kbytes Page：4 Pages

40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package

120 Amp Schottky Rectifier

文件：117.28 Kbytes Page：2 Pages

SCHOTTKY RECTIFIER

文件：99.58 Kbytes Page：5 Pages

Unique high power, Half-Pak module

文件：223.33 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：223.33 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：223.33 Kbytes Page：4 Pages

120 Amp Schottky Rectifier

文件：117.28 Kbytes Page：2 Pages

SCHOTTKY RECTIFIER

文件：99.58 Kbytes Page：5 Pages

Schottky Rectifier, 120 A

文件：112.01 Kbytes Page：6 Pages

Unique high power, Half-Pak module

文件：223.33 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：223.33 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：99.58 Kbytes Page：5 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board