TEST JACKS

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PVC and Nylon LED Spacers

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5 Electrician Scissor

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PC TEST POINT JACK WHITE 测试与计量 测试点

包装：散装 描述：CUTTER SHEARS TPRD CROSSING 5\ 工具 刀，切割工具

安装/适配器 NEMA 56 端面适配器 11012-006

此适配器可用于将带有 F1 面板安装装置的 H25E 以及 H25D 或 H38D 编码器安装到 56 尺寸的电机框架上。该套件配有弹性联轴器，以容纳 5/8” 轴（从电机背面突出 1.5”）。

DG-15 IR Instruments

The DG-15ir is a 20 GHz detector designed for 950–1650 nm measurement applications where an instrument-style product is desirable. It provides a peak responsivity of 0.6 A/W at 1310 nm and a flat frequency response. This instrument provides a high performance PIN detector in a hand-held, rugged, bla

POINTS-100 - 楼宇管理系统

Emalytics Controller许可证 可获得额外的100个数据点

Standard battery charger

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MOTOR FEEDBACK SYSTEMS ROTARY HIPERFACE DSL

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Standard battery charger

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6-18 GHz 6-Bit Digital Phase Shifter (Vc)

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Rechargeable Smart Battery Pack Li-Ion

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NC4-100-SMA-1YR - Building management system

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NC4-100-SMA-3YR - Building management system

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NC4-100-SMA-5YR - Building management system

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POINTS-50 - Building management system

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POINTS-100 - Building management system

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TEST JACKS

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NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. INTEGRATED DRIVE, PROTECTION AND SYSTEM CON