FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. INTEGRATED DRIVE, PROTECTION AND SYSTEM CON

Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. INTEGRATED DRIVE, PROTECTION AND SYSTEM CON

Patch Lead - CAT 5E

Patch Lead - CAT 5E Electrical Test 100 open short and miss wire test

Patch Lead - CAT 5E

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封装/外壳：40-PowerDIP 模块（2.835"，72.00mm），33 引线 包装：管件 描述：MOD IPM 3PHASE IGBT 600V 4A 分立半导体产品 功率驱动器模块

600V, 4A cib/ci (integrated module) IGBT module

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C