POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Power Transistors

Power Transistors TO-3 Case (Continued)

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= 20A • Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A • Complement to Type MJ11011 APPLICATIONS • Designed for use as output devices in comple

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

High-Current Complementary Silicon Transistors

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High-Current Complementary Silicon Transistors

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High-Current Complementary Silicon Transistors

文件：68.41 Kbytes Page：4 Pages

High-Current Complementary Silicon Transistors

文件：121.43 Kbytes Page：4 Pages

封装/外壳：TO-204AA，TO-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 60V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

AUTOMOTIVE LOW PROFILE MICRO-ISO/MICRO-280 RELAY

FEATURES • Low profile: 22.5 mm(L)×15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H) • Low temperature rise Terminal temperature has been reduced compared with using our conventional product • Low sound pressure level Noise level has been reduced approx.10dB com

PVC and Nylon LED Spacers

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TEST JACKS

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TEST JACKS

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AUTOMOTIVE LOW PROFILE MICRO-ISO RELAY Headlights

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