10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitt

10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT

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