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10N60F

N-CHANNEL POWER MOSFET

文件:2.72841 Mbytes Page:8 Pages

SUNMATE

森美特

10N60F

高压MOSFET

PINGWEI

10N60F

场效应晶体管

LUGUANG

鲁光电子

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

FAIRCHILD

仙童半导体

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

STMICROELECTRONICS

意法半导体

Short Circuit Rated IGBT

文件:596.68 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

10N60F产品属性

  • 类型

    描述

  • V(BR)DS_min(V):

    600

  • ID_max(A):

    10

  • Rds_max(Ω):

    0.75

  • @VGS(V):

    10

  • VTH(GS):

    4

  • PACKAGE:

    ITO-220AB

更新时间:2026-5-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PV
2026+
TO220F
54648
百分百原装现货 实单必成 欢迎询价

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