| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
10N60F | N-CHANNEL POWER MOSFET 文件:2.72841 Mbytes Page:8 Pages | SUNMATE 森美特 | ||
10N60F | 高压MOSFET | PINGWEI | ||
10N60F | 场效应晶体管 | LUGUANG 鲁光电子 | ||
Short Circuit Rated IGBT General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher | FAIRCHILD 仙童半导体 | |||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h | FAIRCHILD 仙童半导体 | |||
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY | STMICROELECTRONICS 意法半导体 | |||
Short Circuit Rated IGBT 文件:596.68 Kbytes Page:8 Pages | FAIRCHILD 仙童半导体 |
10N60F产品属性
- 类型
描述
- V(BR)DS_min(V):
600
- ID_max(A):
10
- Rds_max(Ω):
0.75
- @VGS(V):
10
- VTH(GS):
4
- PACKAGE:
ITO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PV |
2026+ |
TO220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
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10N60F规格书下载地址
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DdatasheetPDF页码索引
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