HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS

[Profusion] 250V N/P LATERAL MOSFETS HIGH POWER 25W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement Mode silicon Gate TMOS POWER FET 10 AMPERES RDS(on) = 0.45 OHM 250 VOLTS

Dual N-Channel 3 0-V (D-S) MOSFET

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Super high dense cell design for low RDS(ON).

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