Inst, 8 Pr #18 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry/Wet

Product Description UL Instrumentation, 8 Pair 18AWG (7x26) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry/Wet SUN RES DIR BUR

包装：盒 描述：TAPERED CAP - OD RANGE: 43.7 - 4 五金件，紧固件，配件 孔插头 - 锥形盖

Inst, 8 Pr #18 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry/Wet

Product Description UL Instrumentation, 8 Pair 18AWG (7x26) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry/Wet SUN RES DIR BUR

包装：线轴 描述：CBL 8PR 18AWG SHLD 电缆，电线 多芯导线

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Avalanche Diodes with built-in Thyristor

Avalanche Diodes with built-in Thyristor

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Versatile telephone transmission circuit with dialler interface

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