| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：01N60；600V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/Battery Chargers | ARKMICRO 开阳电子 |   | ||
丝印代码：01N60G；600V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/Battery Chargers | ARKMICRO 开阳电子 | | ||
丝印代码：01N60；600V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/Battery Chargers | ARKMICRO 开阳电子 | | ||
丝印代码：01N60G；600V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 4.8nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS CFL Active PFC Low Power Lamp Ballasts Low Power Adaptor/Battery Chargers | ARKMICRO 开阳电子 | | ||
Planar Power MOSFET (N-CH) | UTC 友顺 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes Page：4 Pages | CET 华瑞 | |
01N6产品属性
- 类型
描述
- VGS(±V)：
±20
- ID(A)：
0.1
- RDS(ON)MAX.(mΩ)atVGS=10V：
60000
- CISSTYP.(pF)：
27
- COSSTYP.(pF)：
11
- CRSSTYP.(pF)：
2.9
- QgTYP.(nC)：
8.2
- QgsTYP.(nC)：
2.9
- QgdTYP.(nC)：
1
- VGS(th)(V)MIN.：
2
- VGS(th)(V)MAX.：
4
- Package：
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SANKEN |
14+ |
TO-220F-5 |
396 |
全新 发货1-2天 |
|||
IPS |
1650+ |
TO-252 |
7500 |
只做原装进口,假一罚十 |
|||
ARK |
13+ |
TO252 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IPS |
23+ |
TO-252 |
60775 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ARK |
24+ |
TO-252 |
36200 |
全新原装现货/放心购买 |
|||
I |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
IPS |
25+ |
TO-252 |
90000 |
全新原装现货 |
|||
ARK |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
SANKEN |
23+ |
TO-220F-5 |
50000 |
全新原装正品现货,支持订货 |
01N6规格书下载地址
01N6参数引脚图相关
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2020-9-19029707.5wxnvLITTELFUSE/力特全序列欢迎来电询价18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-8-27
DdatasheetPDF页码索引
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