丝印代码：01N60；600V N-Channel MOSFET

General Features  Low ON Resistance  Low Gate Charge (typical 4.8nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  CFL  Active PFC  Low Power Lamp Ballasts  Low Power Adaptor/Battery Chargers

丝印代码：01N60G；600V N-Channel MOSFET

General Features  Low ON Resistance  Low Gate Charge (typical 4.8nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant  Halogen-free available Applications  High Efficiency SMPS  CFL  Active PFC  Low Power Lamp Ballasts  Low Power Adaptor/Battery Chargers

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

Mini size of Discrete semiconductor elements

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N Channel MOSFET

文件：190.91 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：106.9 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：106.9 Kbytes Page：6 Pages