W39价格

参考价格:¥8.7053

型号:W39L512P-90 品牌:Winbond 备注:这里有W39多少钱,2024年最近7天走势,今日出价,今日竞价,W39批发/采购报价,W39行情走势销售排行榜,W39报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Internal Antenna 5G/4G 2x2 MIMO FPC Antenna

Applications: -5GFR1/4G -IncludesBand71(617-698MHz) -Foldablefortightspaces -Security,Video,GraphicsTransportation,TrackingIoTDevices

pulse

Pulse Electronics

pulse

Integrated Loop Control and Sequence

Features •High-speedexecutionoffunctionblocksformulti-loopcontrolwithanoperationcycleof10ms •Allfunctionsachievedbyusingonlyfunctionblocks(operationfunctions/designationoffieldinput/output) •Almostallcontroltypesfreelyachievedbycombiningfunctionblocks •Fu

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

CJ-series Power Supply Unit

Features •Thereplacementnotificationfunctioncanpreventanoverflowofthesystemduetothepowerlifetime.(CJ1W-PA205Conly) •PowerSupplyUnitprovideswidevariationsaccordingtothesystemscaleuptomaximum25W. •PowerSupplyUnitprovideswidevariationsaccordingtothepower

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

Integrated Loop Control and Sequence

Features •High-speedexecutionoffunctionblocksformulti-loopcontrolwithanoperationcycleof10ms •Allfunctionsachievedbyusingonlyfunctionblocks(operationfunctions/designationoffieldinput/output) •Almostallcontroltypesfreelyachievedbycombiningfunctionblocks •Fu

OMRONOmron Electronics LLC

欧姆龙欧姆龙株式会社

OMRON

CBRS FPC Antenna FPC Antenna

Features&Applications: -3550-3980MHz -CoversB43,B48(USCBRS) -Cableandconnectorcanbecustomized -Applicableon2.5Dsurfaces -IoT,M2M -Mountingwithadhesivetape(included)

pulse

Pulse Electronics

pulse

CBRS FPC Antenna FPC Antenna

Features&Applications: -3550-3980MHz -CoversB43,B48(USCBRS) -Cableandconnectorcanbecustomized -Applicableon2.5Dsurfaces -IoT,M2M -Mountingwithadhesivetape(included)

pulse

Pulse Electronics

pulse

CBRS FPC Antenna FPC Antenna

Features&Applications: -3550-3980MHz -CoversB43,B48(USCBRS) -Cableandconnectorcanbecustomized -Applicableon2.5Dsurfaces -IoT,M2M -Mountingwithadhesivetape(included)

pulse

Pulse Electronics

pulse

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

128K X 8 CMOS FLASH MEMORY

GENERALDESCRIPTION TheW29EE012isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128Kx8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE012resultsinfastprogram/eraseo

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Aisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogrammeda

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Aisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogrammeda

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Aisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogrammeda

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

LTE Primary GNSS FPC Antenna

文件:1.0795 Mbytes Page:20 Pages

pulse

Pulse Electronics

pulse

: Flexible PCB Antennas ISM, WiFi ,2G/3G/4G, LTE, GNSS

文件:760.8 Kbytes Page:4 Pages

pulse

Pulse Electronics

pulse

: Flexible PCB Antennas ISM, WiFi ,2G/3G/4G, LTE, GNSS

文件:760.8 Kbytes Page:4 Pages

pulse

Pulse Electronics

pulse

LTE 698 3600MHz FPC Antenna

文件:968.95 Kbytes Page:15 Pages

pulse

Pulse Electronics

pulse

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:RF ANT 2.15GHZ FLAT PATCH CAB RF/IF,射频/中频和 RFID RF 天线

pulse

Pulse Electronics

pulse

LTE 698 3600MHz FPC Antenna

文件:968.95 Kbytes Page:15 Pages

pulse

Pulse Electronics

pulse

包装:散装 描述:LTE DIVERSITY FPC ANTENNA RF/IF,射频/中频和 RFID RF 天线

pulse

Pulse Electronics

pulse

LTE 698 3600MHz FPC Antenna

文件:968.95 Kbytes Page:15 Pages

pulse

Pulse Electronics

pulse

LTE 698 3600MHz FPC Antenna

文件:968.95 Kbytes Page:15 Pages

pulse

Pulse Electronics

pulse

LTE 698 3600MHz FPC Antenna

文件:968.95 Kbytes Page:15 Pages

pulse

Pulse Electronics

pulse

LTE 698 3600MHz FPC Antenna

文件:968.95 Kbytes Page:15 Pages

pulse

Pulse Electronics

pulse

GNSS FPC Antenna

文件:511.49 Kbytes Page:9 Pages

pulse

Pulse Electronics

pulse

: Flexible PCB Antennas ISM, WiFi ,2G/3G/4G, LTE, GNSS

文件:760.8 Kbytes Page:4 Pages

pulse

Pulse Electronics

pulse

3G 880-960/1710-2170MHz GNSS Antenna

文件:1.75155 Mbytes Page:12 Pages

pulse

Pulse Electronics

pulse

W39产品属性

  • 类型

    描述

  • 型号

    W39

  • 制造商

    Molex

  • 功能描述

    DIN 9.4MM AC BLK PUR 1M

更新时间:2024-6-4 16:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CKMTW
23+
NA
5
现货!就到京北通宇商城
PULSE(普思)
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
PULSE(普思)
23+
1483
原装现货,免费供样,技术支持,原厂对接
ApexToolGroup/CooperTool
5
全新原装 货期两周
Pulse Electronics
20+
sop
10000
现货常备产品原装可到京北通宇商城查价格
NUVOTON
2021+
SOP8
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CKMTW
5
NUVOTON/新唐
SOP-8
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
Ckmtw(灿科盟)
22+
连接器
123000
主打连接器供应,现货库存
23+
N/A
54000
一级代理放心采购

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