位置：首页 > IC中文资料第11539页 > VIT1060C-M3-4W
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VIT1060C-M3-4W | DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 |  |   |
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 | | | |
DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技 | | |
VIT1060C-M3-4W产品属性
- 类型
描述
- 型号
VIT1060C-M3-4W
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Di |
23+ |
TO262AA |
9000 |
原装正品，支持实单 |
|||
VISHAY |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-262-3 |
36218 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
22+ |
TO-262 |
8900 |
英瑞芯只做原装正品!!! |
|||
Vishay General Semiconductor - |
24+ |
TO-262-3,长引线,I?Pak,TO-26 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
VISHAY/威世 |
TO262 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
VISHAY |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
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VIT1060C-M3-4W规格书下载地址
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DdatasheetPDF页码索引
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