TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=1.7Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=2.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

GlassPassivatedSingle-In-LineBridgeRectifier

文件：124.34 Kbytes Page：3 Pages

GlassPassivatedSingle-In-LineBridgeRectifier

文件：123.44 Kbytes Page：4 Pages

SINGLEPHASEGLASSPASSIVATEDBRIDGERECTIFIERVoltage:50to1000VCurrent:4.0A

文件：144.95 Kbytes Page：2 Pages

3QuadrantsStandardTRIAC

文件：540.78 Kbytes Page：6 Pages

4QuadrantsSensitiveTRIAC

文件：551.32 Kbytes Page：6 Pages