位置：首页 > IC中文资料第1492页 > SUB60N06-18
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SUB60N06-18 | N-Channel60-V(D-S),175CMOSFET N-Channel60-V(D-S),175°CMOSFET 175°CRatedMaximumJunctionTemperature TrenchFET®PowerMOSFETs ProductSummary V(BR)DSS 60V rDS(on) 0.018Ω ID 60A | VishayVishay Siliconix 威世科技 |  |   |
SUB60N06-18 | N-Channel60-V(D-S)MOSFET 文件：883.99 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-Channel60-V(D-S),175CMOSFET N-Channel60-V(D-S),175°CMOSFET 175°CRatedMaximumJunctionTemperature TrenchFET®PowerMOSFETs ProductSummary V(BR)DSS 60V rDS(on) 0.018Ω ID 60A | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：277.1 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SUB60N06-18产品属性
- 类型
描述
- 型号
SUB60N06-18
- 功能描述
MOSFET 60V 60A 120W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
D2PAK(TO-263) |
48000 |
只做原装,绝对原装,假一罚十 |
|||
VISHAY |
2022 |
TO-263 |
1600 |
||||
SIL |
SOT263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
TO-263 |
9399 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
|||
Vishay |
2316+ |
TO-263 |
3866 |
优势代理渠道,原装现货,可全系列订货 |
|||
VISHAY/威世 |
23+ |
D2PAK(TO-263) |
6088 |
只做原装 欢迎咨询 |
|||
VISHAY/威世 |
2024+实力库存 |
TO-263 |
20000 |
只做原厂渠道 可追溯货源 |
|||
VISHAY |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
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DdatasheetPDF页码索引
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