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STP26NM60N价格
参考价格：￥7.8746
型号：STP26NM60N 品牌：STMicroelectronics 备注：这里有STP26NM60N多少钱，2024年最近7天走势，今日出价，今日竞价，STP26NM60N批发/采购报价，STP26NM60N行情走势销售排行榜，STP26NM60N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP26NM60N | N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
STP26NM60N | N-channel600V,0.135廓typ.,20AMDmesh??IIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP26NM60N | IscN-ChannelMOSFETTransistor 文件：317.35 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor 文件：320.69 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP26NM60N产品属性
- 类型
描述
- 型号
STP26NM60N
- 功能描述
MOSFET N-channel 600 V Mdmesh II Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
59210 |
正品授权货源可靠 |
||||
ST |
2017+ |
TO-220 |
3000 |
原装正品现货,可开13点税 |
|||
ST |
21+ |
TO-220 |
9 |
只做原装正品 |
|||
ST/意法 |
23+ |
TO-220-3 |
35000 |
热卖原装现货 |
|||
STM |
2019 |
TO220 |
23500 |
原装正品钻石品质假一赔十 |
|||
ST/意法 |
21+ |
TO220 |
6000 |
原装正品 |
|||
ST |
23+ |
TO220 |
6996 |
只做原装正品现货 |
|||
ST |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
STM |
21+ |
TO-220 |
9000 |
专营原装正品现货,当天发货,可开发票! |
|||
ST |
2047 |
TO-220 |
24000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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