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STP26NM60ND价格
参考价格：￥18.9926
型号：STP26NM60ND 品牌：STMicroelectronics 备注：这里有STP26NM60ND多少钱，2024年最近7天走势，今日出价，今日竞价，STP26NM60ND批发/采购报价，STP26NM60ND行情走势销售排行榜，STP26NM60ND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP26NM60ND | Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
STP26NM60ND | iscN-ChannelMOSFETTransistor 文件：320.69 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP26NM60ND产品属性
- 类型
描述
- 型号
STP26NM60ND
- 制造商
STMicroelectronics
- 功能描述
N-CHANNEL 600 V, 0.144 OHM TYP., 21 A FDMESH(TM) II POWER MO - Rail/Tube
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 21A TO220
- 制造商
STMicroelectronics
- 功能描述
Single N-Channel 650 V 0.175 Ohm 190 W Through Hole Power Mosfet - TO-220-3
- 制造商
STMicroelectronics
- 功能描述
N-channel 600 V, 0.144 Ohm typ., 21 A, TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO-220 |
30000 |
原装正品 |
|||
ST/意法 |
23+ |
98000 |
|||||
ST/意法 |
23+ |
NA/ |
3459 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
22+ |
TO-220 |
97556 |
||||
ST |
23+ |
TO-220 |
6000 |
原装,可配单 |
|||
ST/意法 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ST/意法 |
22+ |
N |
12800 |
本公司只做进口原装!优势低价出售! |
|||
ST |
23+ |
TO-220 |
10800 |
只做原装 欢迎咨询 |
|||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
||||
ST |
20+ |
TO-220 |
25000 |
全新原装现货,假一赔十 |
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