SI4410DY价格

参考价格:¥2.1914

型号:SI4410DYPBF 品牌:IR 备注:这里有SI4410DY多少钱,2024年最近7天走势,今日出价,今日竞价,SI4410DY批发/采购报价,SI4410DY行情走势销售排行榜,SI4410DY报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SI4410DY

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS™technology. Applications ■DCtoDCconvertor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
SI4410DY

SingleN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
SI4410DY

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技

Vishay
SI4410DY

HEXFETPowerMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO-

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
SI4410DY

N-channelTrenchMOSlogiclevelFET

Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowcond

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
SI4410DY

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
SI4410DY

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

HEXFET짰PowerMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

N-Channel650V(D-S)MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技

Vishay

N-ChannelMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SimpleDriveRequirements

文件:124.61 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SimpleDriveRequirements

文件:124.61 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-Channel20V(D-S)MOSFET

文件:1.01333 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-ChannelEnhancementModeMOSFET

文件:523.71 Kbytes Page:4 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

N-Channel20V(D-S)MOSFET

文件:1.00712 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel20V(D-S)MOSFET

文件:1.00699 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SI4410DY产品属性

  • 类型

    描述

  • 型号

    SI4410DY

  • 功能描述

    MOSFET 30V N-Ch. FET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原厂原包
2022+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
IR
23+
1018
SO-8
INFINEON
22+
SOP-8
10000
原装正品!!!优势库存!0755-83210901
VISHAY
04+
168
全新原装!优势库存热卖中!
VISHAY/威世
20+原装正品
SOP8
6000
大量现货,免费发样。
SILICONIX
2339+
SOP-8
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
VISHAY
2016+
SOP8
3000
只做原装,假一罚十,公司可开17%增值税发票!
VISHAY/威世
21+
6000
原装正品
VISHAY/威世
22+
SO-8
612
只做原装进口 免费送样!!
IR
17+
SOP
6200
100%原装正品现货

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