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SI4410DY价格
参考价格:¥2.1914
型号:SI4410DYPBF 品牌:IR 备注:这里有SI4410DY多少钱,2024年最近7天走势,今日出价,今日竞价,SI4410DY批发/采购报价,SI4410DY行情走势销售排行榜,SI4410DY报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SI4410DY | N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS™technology. Applications ■DCtoDCconvertor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
SI4410DY | SingleN-ChannelLogicLevelPowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
SI4410DY | N-Channel30-V(D-S)MOSFET FEATURES TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技 | ||
SI4410DY | HEXFETPowerMOSFET Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
SI4410DY | N-channelTrenchMOSlogiclevelFET Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowcond | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
SI4410DY | N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
SI4410DY | N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
HEXFET짰PowerMOSFET Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFET Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel30-V(D-S)MOSFET FEATURES TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技 | |||
N-Channel30-V(D-S)MOSFET FEATURES TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技 | |||
N-Channel30-V(D-S)MOSFET FEATURES TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技 | |||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel30-V(D-S)MOSFET FEATURES TrenchFETPowerMOSFET | VishayVishay Siliconix 威世科技 | |||
N-ChannelMOSFET Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
SimpleDriveRequirements 文件:124.61 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
SimpleDriveRequirements 文件:124.61 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel20V(D-S)MOSFET 文件:1.01333 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-ChannelEnhancementModeMOSFET 文件:523.71 Kbytes Page:4 Pages | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
N-Channel20V(D-S)MOSFET 文件:1.00712 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel20V(D-S)MOSFET 文件:1.00699 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
SI4410DY产品属性
- 类型
描述
- 型号
SI4410DY
- 功能描述
MOSFET 30V N-Ch. FET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
原厂原包 |
2022+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
IR |
23+ |
1018 |
SO-8 |
||||
INFINEON |
22+ |
SOP-8 |
10000 |
原装正品!!!优势库存!0755-83210901 |
|||
VISHAY |
04+ |
168 |
全新原装!优势库存热卖中! |
||||
VISHAY/威世 |
20+原装正品 |
SOP8 |
6000 |
大量现货,免费发样。 |
|||
SILICONIX |
2339+ |
SOP-8 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
VISHAY |
2016+ |
SOP8 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISHAY/威世 |
21+ |
6000 |
原装正品 |
||||
VISHAY/威世 |
22+ |
SO-8 |
612 |
只做原装进口 免费送样!! |
|||
IR |
17+ |
SOP |
6200 |
100%原装正品现货 |
SI4410DY规格书下载地址
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