位置:首页 > IC中文资料第2358页 > SGP20N60RUFTU
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | |||
FastSwitching 文件:95.42 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel650-V(D-S)SuperJunctionMOSFET 文件:1.15549 Mbytes Page:11 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
20A600VN-channelenhancedfieldeffecttransistor 文件:833.85 Kbytes Page:6 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |
SGP20N60RUFTU产品属性
- 类型
描述
- 型号
SGP20N60RUFTU
- 功能描述
IGBT 晶体管
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJI |
22+ |
TO220F |
25000 |
原装现货,价格优惠,假一罚十 |
|||
FSC |
23+ |
原厂封装 |
9526 |
||||
RSUN |
23+ |
NA/ |
8787 |
原装现货,当天可交货,原型号开票 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
9048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
FUJI |
16+ |
TO220F |
26514 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC |
2023+ |
TO-251 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
INFINEON/英飞凌 |
2021+ |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
U |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
LONTEN |
17+ |
TO-220 |
25500 |
门市原装现货!支持实单,一片起卖! |
|||
ZXYS |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
SGP20N60RUFTU规格书下载地址
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DdatasheetPDF页码索引
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