位置:首页 > IC中文资料第5538页 > 20N60
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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20N60 | 20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | ||
20N60 | FastSwitching 文件:95.42 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
20N60 | N-Channel650-V(D-S)SuperJunctionMOSFET 文件:1.15549 Mbytes Page:11 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode600V TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymode | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HiPerFASTIGBT VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity | IXYS IXYS Integrated Circuits Division | |||
HiPerFASTIGBTwithDiode VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •Internationalstandardpackages •HighfrequencyIGBTandantiparallelFREDinonepackage •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Unin | IXYS IXYS Integrated Circuits Division | |||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
20A,600VN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-ChannelenhancementmodepowerMOSFET Features Lowon-stateresistance Lowswitchingloss easytouse(morecontrollabeswitchingdV/dtbyRg) Applications UPS Server Telecom Powerconditionersystem Powersupply | FujiFUJI CORPORATION 株式会社FUJI | |||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:207.55 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
20A600VN-channelenhancedfieldeffecttransistor 文件:833.85 Kbytes Page:6 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
600V,SMPSSeriesN-ChannelIGBTs 文件:908.79 Kbytes Page:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
HITACHIEncapsulation,DIP16 文件:50.2 Kbytes Page:1 Pages | HitachiHitachi, Ltd. 日立公司 | |||
CoolMOSPowerTransistor 文件:471.68 Kbytes Page:12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated 文件:654.59 Kbytes Page:12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:207.55 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:207.55 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:207.55 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNELMOSFETFORHIGHSPEEDSWITCHING 文件:207.55 Kbytes Page:3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |
20N60产品属性
- 类型
描述
- 型号
20N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
20A, 600V N-CHANNEL POWER MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJI |
16+ |
TO220F |
26514 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
REASUNOS |
1948+ |
TO-3P |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
INF |
22+ |
TO-3P |
163000 |
一级代理商现货保证进口原装正品假一罚十价格合理 |
|||
AOS |
2020+ |
TO-220F |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
22+ |
3000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||||
INFINEON |
23+ |
TO220 |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
Infineon(英飞凌) |
23+ |
NA |
7000 |
原装正品!假一罚十! |
|||
FUJI |
21+ |
TO220F |
32083 |
原装现货假一赔十 |
|||
FAIRCHILD/仙童 |
23+ |
TO-220 |
90000 |
优势库存全新原装现货 |
|||
ZXYS |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
20N60规格书下载地址
20N60参数引脚图相关
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- 20Mx2-254mm
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- 20MT120UFAPBF
- 20MT120UF
- 20MR16/FL35/C(BAB) 12V
- 20MR11/T/FL35/C(FTD) 12V
- 20MR11/NS11
20N60数据表相关新闻
20R-JMCS-G-TF(NSA)
20R-JMCS-G-TF(NSA)
2023-4-1820N50L-TO220F2T-TGHC_UTC代理商
20N50L-TO220F2T-TGHC_UTC代理商
2023-3-620HM1-1
进口代理
2022-6-620TQC22M 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
20TQC22M深圳市得捷芯城电子科技AVXKEMET尼康三洋钽电容代理商
2020-8-1220PT1024XLF
20PT1024XLF,全新原装当天发货或门市自取0755-82732291.
2019-11-2820A10大功率电源充电二极管防倒/回流二极管20A,1000V
深圳德田科技电子元器件一站式配套服务,可开税票可提供样品,因产品过多没有一一上传,如需了解更多产品信息和价格欢迎咨询我们的工作人员电话:18680328178QQ:229754250
2019-7-25
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