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S901晶体管资料

  • S9010别名：S9010三极管、S9010晶体管、S9010晶体三极管

  • S9010生产厂家：

  • S9010制作材料：Si-N/P

  • S9010性质：通用型 （Uni）

  • S9010封装形式：

  • S9010极限工作电压：50V

  • S9010最大电流允许值：0.2A

  • S9010最大工作频率：300MHZ

  • S9010引脚数：

  • S9010最大耗散功率：0.5W

  • S9010放大倍数：β=900

  • S9010图片代号：NO

  • S9010vtest：50

  • S9010htest：300000000

  • S9010atest：.2

  • S9010wtest：.5

  • S9010代换 S9010用什么型号代替：BC547,

S901价格

参考价格：￥0.0500

型号：S9012 品牌：CJ 备注：这里有S901多少钱，2024年最近7天走势，今日出价，今日竞价，S901批发/采购报价，S901行情走势销售排行榜，S901报价。
型号 功能描述 生产厂家&企业 LOGO 操作
S9011

TRANSISTOR竊?NPN竊

TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9011

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
S9011

TO-92Plastic-EncapsulateTransistors

TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
S9011

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor.

DSK

Diode Semiconductor Korea

DSK
S9011

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.31W(Tamb=25℃) Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
S9011

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
S9011

SILICONEPITAXIALPLANARTRANSISTOR

Features •CollectorCurrent.(IC=30mA） •Powerdissipation.(PC=200mW) MechanicalData •Case:SOT-23,MoldedPlastic •Terminals:SolderableperMIL-STD-202,Method208 •Polarity:SeeDiagrams •Approx.Weight:0.008grams

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
S9011

Powerdissipation

FEATURE Powerdissipation PCM:0.2W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
S9011LT1

TRANSISTOR竊?NPN竊

TRANSISTOR（NPN) FEATURES Powerdissipation PCM:0.2W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9011LT1-SOT-23

TRANSISTOR竊?NPN竊

TRANSISTOR（NPN) FEATURES Powerdissipation PCM:0.2W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange TJ，Tstg:-55℃to+150

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9011-TO-92

TRANSISTOR竊?NPN竊

TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9012

PNPEPITAXIALPLANARTRANSISTOR

Description TheS9012isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •Hightotalpowerdissipation.(PT:625mW) •Highcollectorcurrent.(IC:500mA) •ComplementarytoS9013 •Excellentlinearity.

TGS

Tiger Electronic Co.,Ltd

TGS
S9012

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=-500mA） ●ComplementaryToS9013. ●ExcellentHFELinearity. APPLICATIONS ●HighCollectorCurrent.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
S9012

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=-500mA） ●ComplementaryToS9013. ●ExcellentHFELinearity. APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK
S9012

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighCollectorCurrent ●ComplementaryToS9013 ●ExcellenthFELinearity

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9012

Plastic-EncapsulateTransistors

Plastic-EncapsulateTransistors FEATURES ComplimentarytoS9013

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
S9012

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpoweroutput stages. Thetransistorissubdividedintothreegroups,G, HandI,accordingtoitsDCcurrentgain.As complementarytypetheNPNtransistor9013

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
S9012

PNPSiliconGeneralPurposeTransistor

FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
S9012

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=-500mA） ●ComplementaryToS9013. ●ExcellentHFELinearity. APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
S9012

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
S9012

TO-92Plastic-EncapsulateTransistors

TRANSOSTOR(PNP) FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
S9012

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ComplementarytoS9013 ●ExcellenthFElinearity

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
S9012

TRANSISTOR(PNP)

FEATURES •ComplementarytoS9013 •ExcellenthFElinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
S9012

SOT-23Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent ComplementaryToS9013 ExcellenthFELinearity

UMWUMW

友台友台半导体

UMW
S9012

TRANSISTOR(PNP)

FEATURES ComplementarytoS9013 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
S9012

PNPTransistors

Features ●ExcellenthFEliearity ●CollectorCurrent:IC=-0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9012-G

PNPSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Marking:S9012 •LeadFreeFinish/RoHSCompliant(PSuffixd

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
S9012-H

PNPSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Marking:S9012 •LeadFreeFinish/RoHSCompliant(PSuffixd

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
S9012-H

PNPTransistors

Features ●ExcellenthFEliearity ●CollectorCurrent:IC=-0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9012-I

PNPSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •Marking:S9012 •LeadFreeFinish/RoHSCompliant(PSuffixd

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
S9012-J

PNPTransistors

Features ●ExcellenthFEliearity ●CollectorCurrent:IC=-0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9012-L

PNPTransistors

Features ●ExcellenthFEliearity ●CollectorCurrent:IC=-0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9012LT1

SOT-23Plastic-EncapsulateTransistors

SOT-23Plastic-EncapsulateTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
S9012LT1

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors

WEITRONWEITRON

威堂電子科技

WEITRON
S9012M

TRANSISTOR

DESCRIPTION PNPEpitaxialSiliconTransistor FEATURES ComplementarytoS9013MExcellenthFElinearity APPLICATION 150mWOutputAmplifierofPotableRadiosinClassBPush-pullOperation. Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9012-SOT23

PNPTransistors

Features ●ExcellenthFEliearity ●CollectorCurrent:IC=-0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9012T

PNPEpitaxialSiliconTransistor

FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
S9012W

SOT-323Plastic-EncapsulateTransistors

FEATURES ComplementarytoS9013W ExcellenthFElinearity

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
S9013

TRANSISTOR(NPN)

FEATURES ComplementarytoS9012 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
S9013

SOT-23Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity.

UMWUMW

友台友台半导体

UMW
S9013

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
S9013

Powerdissipation

FEATURE Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
S9013

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK
S9013

NPNSILICONEPITAXIALPLANARTRANSISTOR

Features •HighCollectorCurrent.(IC=500mA） •ComplementaryToS9012. •ExcellentHFELinearity. •Powerdissipation.(PC=300mW)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
S9013

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent. ●ComplementarytoS9012. ●ExcellenthFELinearity.

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9013

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
S9013

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpoweroutput stages. Thetransistorissubdividedintothreegroups,G, HandI,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistor9012

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
S9013

Plastic-EncapsulateTransistors

Plastic-EncapsulateTransistors FEATURES ComplimentarytoS9012

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA). ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW). APPLICATIONS ●HighCollectorCurrent.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
S9013

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●ComplementarytoS9012 ●ExcellenthFElinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
S9013

TO-92Plastic-EncapsulateTransistors

FEATURE ComplementarytoS9012 ExcellenthFElinearity

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
S9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. •Hightotalpowerdissipation.(PT=625mW) •HighCollectorCurrent.(IC=500mA) •ComplementarytoSS9012 •ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
S9013

PLASTICENCAPSULATETRANSISTORS

[SHENZHENSLSTECHNOLOGYCO.,LTD.] Features: PCandICarelarger,hFElinearityisgood; Applications: Usedinpoweramplifiercircuit,complementarytoS9012.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
S9013

NPNEPITAXIALPLANARTRANSISTOR

Description TheS9013isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •HighTotalPowerDissipation.(PT:625mW) •HighCollectorCurrent.(IC:500mA) •ComplementarytoS9012 •Excellentlinearity.

TGS

Tiger Electronic Co.,Ltd

TGS
S9013

GeneralPurposeTransistor

FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
S9013-G

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
S9013-G

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

S901产品属性

  • 类型

    描述

  • 型号

    S901

  • 制造商

    DAYA

  • 制造商全称

    DAYA

  • 功能描述

    TO-92 Plastic-Encapsulate Transistors

S901供应商更多...

更新时间：2024-4-28 18:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
齐创科技(上海,北京,青岛)有限公司
S9015
长电
23+
SOT-23
60000
原装正品,假一罚十
询价
深圳市明嘉莱科技有限公司
S9015
CJ/长电
24+
SOT23
157372
明嘉莱只做原装正品现货
询价
深圳好佳好科技有限公司
S9015
KEC/TOS/ON
1342+
二三极管
26800
绝对现货
询价
深圳市诚利顺电子科技有限公司
S9015
CJ
22+
SOT23
3500
十七年VIP会员,诚信经营，一手货源，原装正品可零售！
询价
深圳市宇集芯电子有限公司
S9015
长电
23+
TO-92
90000
一级代理商进口原装现货、假一罚十价格合理
询价
深圳市卓越微芯电子有限公司
S9015
2020+
SOT-23
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市振宏微科技有限公司
S9015
JXND
23+
NA
7825
原装正品!清仓处理!
询价
深圳市星宇佳科技有限公司
S9015M6
TASUND/泰盛达
2015+
SOT-23
288000
询价
深圳市毅创弘电子科技有限公司
S9015M6
JIANGSU
18+
SMD
10
原装正品 专营军工
询价
深圳市莱克讯科技有限公司
S9015
CJ
08+
SOT23
1940
公司原装现货,可来看货!
询价

S901芯片相关品牌

  • ANAREN
  • CDE
  • COMCHIP
  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • Philips
  • WALSIN
  • WURTH

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