S9013晶体管资料

  • S9013别名:S9013三极管、S9013晶体管、S9013晶体三极管

  • S9013生产厂家

  • S9013制作材料:Si-N/P

  • S9013性质:低频或音频放大 (LF)

  • S9013封装形式:直插封装

  • S9013极限工作电压:40V

  • S9013最大电流允许值:0.1A

  • S9013最大工作频率:<1MHZ或未知

  • S9013引脚数:3

  • S9013最大耗散功率:0.5W

  • S9013放大倍数

  • S9013图片代号:A-20

  • S9013vtest:40

  • S9013htest:999900

  • S9013atest:.1

  • S9013wtest:.5

  • S9013代换 S9013用什么型号代替

S9013价格

参考价格:¥0.0600

型号:S9013 品牌:JXK 备注:这里有S9013多少钱,2024年最近7天走势,今日出价,今日竞价,S9013批发/采购报价,S9013行情走势销售排行榜,S9013报价。
型号 功能描述 生产厂家&企业 LOGO 操作
S9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. •Hightotalpowerdissipation.(PT=625mW) •HighCollectorCurrent.(IC=500mA) •ComplementarytoSS9012 •ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
S9013

PLASTICENCAPSULATETRANSISTORS

[SHENZHENSLSTECHNOLOGYCO.,LTD.] Features: PCandICarelarger,hFElinearityisgood; Applications: Usedinpoweramplifiercircuit,complementarytoS9012.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
S9013

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●ComplementarytoS9012 ●ExcellenthFElinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
S9013

TO-92Plastic-EncapsulateTransistors

FEATURE ComplementarytoS9012 ExcellenthFElinearity

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

DAYA
S9013

NPNEPITAXIALPLANARTRANSISTOR

Description TheS9013isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •HighTotalPowerDissipation.(PT:625mW) •HighCollectorCurrent.(IC:500mA) •ComplementarytoS9012 •Excellentlinearity.

TGS

Tiger Electronic Co.,Ltd

TGS
S9013

GeneralPurposeTransistor

FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK
S9013

NPNSILICONEPITAXIALPLANARTRANSISTOR

Features •HighCollectorCurrent.(IC=500mA) •ComplementaryToS9012. •ExcellentHFELinearity. •Powerdissipation.(PC=300mW)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
S9013

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent. ●ComplementarytoS9012. ●ExcellenthFELinearity.

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
S9013

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
S9013

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpoweroutput stages. Thetransistorissubdividedintothreegroups,G, HandI,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistor9012

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
S9013

Plastic-EncapsulateTransistors

Plastic-EncapsulateTransistors FEATURES ComplimentarytoS9012

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA). ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW). APPLICATIONS ●HighCollectorCurrent.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
S9013

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9013

Powerdissipation

FEATURE Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
S9013

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
S9013

SOT-23Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity.

UMWUMW

友台友台半导体

UMW
S9013

TRANSISTOR(NPN)

FEATURES ComplementarytoS9012 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
S9013

Plastic-EncapsulateTransistors

文件:661.49 Kbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
S9013

GeneralPurposeTransistor

文件:349.4 Kbytes Page:1 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
S9013

NPNGeneralpurposeAmplifier

文件:1.28766 Mbytes Page:5 Pages

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
S9013

NPNSiliconEpitaxialPlanarTransistor

文件:220 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
S9013

Plastic-EncapsulateTransistors

文件:650.57 Kbytes Page:2 Pages

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

SHENZHENSLS
S9013

TRANSISTOR(NPN)

文件:245.93 Kbytes Page:2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
S9013

NPNSiliconTransistor

文件:87.63 Kbytes Page:3 Pages

AUK

AUK

AUK

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.3W(Tamb=25°C) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBOP40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

TRANSISTOR

FEATURES HighCollectorCurrent.(IC=500mA) ComplementarytoS9012M ExcellenthFElinearity. APPLICATION 150mWOutputAmplifierofPotableRadiosinClassBPush-pullOperation. Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

Plastic-EncapsulateTransistors

FEATURES ComplementarytoS9012 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

NPNEpitaxialSiliconTransistor

FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55to+150°C

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK

TRANSISTOR(NPN)

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

0.5A,40VNPNPlasticEncapsulatedTransistor

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SOT-323Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent ExcellentHFELinearity

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●HighCollectorCurrent ●ExcellentHFELinearity

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

NPNSiliconEpitaxialPlanarTransistor

文件:220 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

GeneralPurposeTransistor

文件:349.4 Kbytes Page:1 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNSiliconTransistors

文件:181.88 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

文件:1.85901 Mbytes Page:3 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

SOT-23Plastic-EncapsulateTransistors

文件:2.077659 Mbytes Page:4 Pages

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

NPNEpitaxialSiliconTransistor

文件:101.62 Kbytes Page:2 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

Plastic-EncapsulateTransistors

文件:661.49 Kbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

TO-92Plastic-EncapsulateTransistors

文件:2.48587 Mbytes Page:4 Pages

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

NPNSiliconEpitaxialPlanarTransistor

文件:217.13 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

S9013产品属性

  • 类型

    描述

  • 型号

    S9013

  • 功能描述

    TO-92 Plastic-Encapsulate Transistors(HAROM ELECTRONIC)

更新时间:2024-4-25 23:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KEC
12+
T0-92
100
原装现货价格有优势量多可发货
UMW(广东友台半导体)
24+
SOT-23-3
5000
诚信服务,绝对原装原盘。
SK
2018+
SOT23
20000
一级代理原装现货假一罚十
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
CJ/长电
24+
SOT23
157373
明嘉莱只做原装正品现货
CJ/长电
21+
SOT-23
34000
原装现货,一站式配套
国产
23+
sot23
8000
深圳现货,原装正品
CJ
2020+
SOT-23
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
CJ/长电
21+
SOT-23
50000
原装现货/假一赔十/支持第三方检验
CJ
21+
TO92
9800
只做原装正品假一赔十!正规渠道订货!

S9013芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

S9013数据表相关新闻