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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RJP60D0DPK | SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching 文件：84.57 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 45A 140W TO-3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
RJP60D0DPK产品属性
- 类型
描述
- 型号
RJP60D0DPK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
58300 |
一级代理放心采购 |
||||
RENESAS/瑞萨 |
TO-3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
RENESAS/瑞萨 |
TO-3P |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
瑞萨 |
1746+ |
TO3P |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
RENESAS/瑞萨 |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
|||
RENESAS/瑞萨 |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
RENESAS/瑞萨 |
23+ |
TO-3P |
6000 |
原装正品，支持实单 |
|||
瑞萨 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
RENESAS/瑞萨 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
|||
RENESAS-瑞萨 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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2019-3-7
DdatasheetPDF页码索引
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