型号 功能描述 生产厂家&企业 LOGO 操作

HighPowerRFLDMOSFieldEffectTransistor140W,28V,2010-2025MHz

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithWolfspeed’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

CreeCree Inc.

科锐科锐半导体制造商

Cree

HighPowerRFLDMOSFieldEffectTransistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HighPowerRFLDMOSFieldEffectTransistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HighPowerRFLDMOSFieldEffectTransistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HighPowerRFLDMOSFieldEffectTransistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HighPowerRFLDMOSFieldEffectTransistor

Description ThePTFB201402FCintegratestwo70WLDMOSFETsintooneopen-cavityceramicpackage.ItisdesignedprimarilyforDohertycellularamplifierapplicationsinthe2010to2025MHzfrequencyband.ManufacturedwithInfineon’sadvancedLDMOSprocess,thisdeviceoffersexcellentthermal

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

封装/外壳:H-37248-4 包装:卷带(TR) 描述:140W, SI LDMOS, 28V, 2010-2025MH 分立半导体产品 晶体管 - FET,MOSFET - 射频

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

封装/外壳:H-37248-4 包装:卷带(TR) 描述:IC AMP RF LDMOS 分立半导体产品 晶体管 - FET,MOSFET - 射频

WOLFSPEED

WOLFSPEED, INC.

WOLFSPEED

SingleRowTerminalBlocks

文件:1.88296 Mbytes Page:6 Pages

EATONEaton All Rights Reserved.

伊顿伊顿公司

EATON

SingleRowTerminalBlocks

文件:1.88296 Mbytes Page:6 Pages

EATONEaton All Rights Reserved.

伊顿伊顿公司

EATON

ALLDIMENSIONSINMM[INCH]

文件:31.76 Kbytes Page:1 Pages

E-SWITCH

E-Switch, Inc.

E-SWITCH

PTFB201402F产品属性

  • 类型

    描述

  • 型号

    PTFB201402F

  • 功能描述

    射频MOSFET电源晶体管 RFP-LDMOS 9

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2024-5-24 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
Infineon
23+
N/A
1
订货库存 只做原装
INFINEON
23+
NA
8000
只做原装现货
InfineonTechnologies
2019+
H-37248-4
65500
原装正品货到付款,价格优势!
Infineon Technologies
22+
H372484
9000
原厂渠道,现货配单
INFINEON/英飞凌
23+
5177
深圳现货
Wolfspeed
22+
Tube
5710
只做原装进口货
INFINEON
1844+
NA
9852
只做原装正品假一赔十为客户做到零风险!!
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,

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