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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NX6508 | LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NX6508 | NECsInGaAsPMQW-DFBLASERDIODEINCANPACKAGEFOR2.5Gb/s,CWDMAPPLICATIONS 文件：332.22 Kbytes Page：4 Pages | CEL California Eastern Laboratories |  | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsInGaAsPMQW-DFBLASERDIODEINCANPACKAGEFOR2.5Gb/s,CWDMAPPLICATIONS 文件：332.22 Kbytes Page：4 Pages | CEL California Eastern Laboratories | | | |
30VN-ChannelAlphaMOS GeneralDescription •LatestTrenchPowerAlphaMOS(αMOSLV)technology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant ProductSummary VDS30V ID(atVGS=10V) | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | | |
IsolatedDiodeArraywithHiRelMQ,MX,MV,andSPScreeningOptions 文件：65.129 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
500kHz21V3ASYNCHRONOUSDC/DCBUCKCONVERTER 文件：999.84 Kbytes Page：14 Pages | DIODESDiodes Incorporated 达尔科技 |  | | |
500kHz21V3ASYNCHRONOUSDC/DCBUCKCONVERTER 文件：999.84 Kbytes Page：14 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
20C287/36TCPVCOASPVCCOMMUNICATIONCABLE 文件：74.59 Kbytes Page：1 Pages | GENERALGeneral Electric 通用电气公司美国通用电气公司 |  | |
NX6508产品属性
- 类型
描述
- 型号
NX6508
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Hirose |
2020+ |
N/A |
8 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
NEC |
2016+ |
DIP |
6528 |
只做进口原装现货!假一赔十! |
|||
WCR |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
正凌 |
21+ |
50 |
全新原装鄙视假货15118075546 |
||||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
正菱精工 |
23+ |
连接器 |
10500 |
专业做连接器接插件原装进口公司现货 |
|||
正凌 |
2017+ |
NA |
23569 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
正凌精工 |
2308+ |
178686 |
一级代理,原装正品,公司现货! |
||||
WINCHESTERC |
6000 |
面议 |
19 |
DIP/SMD |
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焕盛达-专注原装真芯服务；当天下单，当天发货；
2020-8-13
DdatasheetPDF页码索引
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