SiliconCarbide(SiC)MOSFET–60mohm,900V,M2,D2PAK-7L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(QG(tot)=88nC) •HighSpeedSwitchingwithLowCapacitance(Coss=115pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−F

MOSFET-SiCPower,SingleN-Channel,D2PAK-7L900V,60m,44A

文件：802.73 Kbytes Page：8 Pages

SiliconCarbide(SiC)MOSFET–60mohm,900V,M2,D2PAK-7L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(QG(tot)=88nC) •HighSpeedSwitchingwithLowCapacitance(Coss=115pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−F

SiliconCarbide(SiC)MOSFET–EliteSiC,60mohm,900V,M2,TO-247-3L

Features •Typ.RDS(on)=60m@VGS=15V •Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecond

MOSFET-SiCPower,SingleN-Channel900V,60m,46A

文件：773.79 Kbytes Page：7 Pages

MOSFET-SiCPower,SingleN-Channel,D2PAK-7L

文件：709.97 Kbytes Page：8 Pages