位置：首页 > IC中文资料第411页 > NE5550779A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE5550779A | SiliconPowerLDMOSFET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NE5550779A | SiliconPowerLDMOSFET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Laboratories |  | |
SiliconPowerLDMOSFET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPowerLDMOSFET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPowerLDMOSFET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPowerLDMOSFET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPowerLDMOSFET FEATURES •HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) •HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconPowerLDMOSFET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Laboratories | | | |
包装：盒 描述：BOARD EVAL NPN MED PWR TRANS 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL California Eastern Laboratories | | | |
包装：盒 描述：BOARD EVAL NPN MED PWR TRANS 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL California Eastern Laboratories | | | |
SiliconPowerLDMOSFET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Laboratories | | | |
SiliconPowerLDMOSFET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Laboratories | | | |
SiliconPowerLDMOSFET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Laboratories | | | |
SiliconPowerLDMOSFET 文件：3.56692 Mbytes Page：16 Pages | CEL California Eastern Laboratories | | |
NE5550779A产品属性
- 类型
描述
- 型号
NE5550779A
- 制造商
California Eastern Laboratories(CEL)
- 功能描述
SILICON POWER LDMOS FET ROHS COMPLIANT - Product that comes on tape, but is not reeled
- 制造商
California Eastern Laboratories(CEL)
- 功能描述
IC FET LDMOS 30V 0.6A 79A-PKG
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS |
1010+ |
CAN |
700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS(瑞萨)/IDT |
23+ |
6000 |
|||||
RENESAS/Renesas Electronics Am |
21+ |
高频管 |
700 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Renesas |
2年内 |
N/A |
16000 |
英博尔原装优质现货订货渠道商 |
|||
RENESAS(瑞萨)/IDT |
20+ |
- |
5000 |
||||
RENESAS |
2018+ |
NA |
30617 |
一级代理全新原装热卖 |
|||
RENESAS |
NA |
6784 |
正品原装--自家现货-实单可谈 |
||||
RENESAS/瑞萨 |
79A |
265209 |
假一罚十原包原标签常备现货! |
||||
CEL |
23+ |
79A |
9000 |
原装正品，支持实单 |
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