位置：首页 > IC中文资料第577页 > NE3210S01
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE3210S01 | XtoKuBANDSUPERLOWNOISEAMPLIFERN-CHANNELHJ-FET DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NE3210S01 | HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NE3210S01 | SUPERLOWNOISEHJFET 文件：414.97 Kbytes Page：7 Pages | CEL California Eastern Laboratories |  | |
NE3210S01 | 封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Laboratories | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
XtoKuBANDSUPERLOWNOISEAMPLIFERN-CHANNELHJ-FET DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
XtoKuBANDSUPERLOWNOISEAMPLIFERN-CHANNELHJ-FET DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPERLOWNOISEHJFET 文件：414.97 Kbytes Page：7 Pages | CEL California Eastern Laboratories | | | |
SUPERLOWNOISEHJFET 文件：414.97 Kbytes Page：7 Pages | CEL California Eastern Laboratories | | | |
封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Laboratories | | |
NE3210S01产品属性
- 类型
描述
- 型号
NE3210S01
- 功能描述
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
十字架 |
4897 |
绝对原装!现货热卖! |
|||
RENESAS |
23+ |
SMT86 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
NEC |
23+ |
SMT-86 |
4714 |
原厂原装正品 |
|||
NEC |
2023+ |
十字架 |
50000 |
原装现货 |
|||
NEC |
21+ |
SO86 |
35200 |
一级代理/放心采购 |
|||
NEC |
2021+ |
SMT86 |
6494 |
百分百原装正品 |
|||
NEC |
04+ |
SMT-86 |
6203 |
现货-ROHO |
|||
NEC |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
22+ |
SMT86 |
25000 |
只有原装原装,支持BOM配单 |
|||
Renesas瑞萨 |
2019 |
SMT-86 |
136 |
全新原装 实单必成 |
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NE3210S01规格书下载地址
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2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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