DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

DualP-Channel30-V(D-S)MOSFET

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Electronic,3C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt

ProductDescription Electronic,3Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket

PowerMOSFET(Vdss=-30V,Rds(on)=0.25ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

DualP-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

GENERALDESCRIPTION TheAD9953isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9953usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof

400MSPS,14-Bit,1.8VCMOSDirectDigitalSynthesizer

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