位置：首页 > IC中文资料第12918页 > MGV12N120D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MGV12N120D | InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBTsarespecificallysuitedforapplicationsrequiringaguaran | MotorolaMotorola, Inc 摩托罗拉 |  |   |
HighVoltageHiPerFETPowerMOSFET Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •UninterruptiblePowerSupplies(UPS) •DCchoppers Advan | IXYS IXYS Integrated Circuits Division |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou | IXYS IXYS Integrated Circuits Division | | | |
PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou | IXYS IXYS Integrated Circuits Division | | |
MGV12N120D产品属性
- 类型
描述
- 型号
MGV12N120D
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Laird |
21+ |
3000 |
全新原装鄙视假货15118075546 |
||||
Laird-Signal Integrity Product |
23+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
LAIRD-莱尔德 |
24+25+/26+27+ |
车规-被动器件 |
96800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Laird-Signal Integrity Product |
24+ |
非标准 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
Laird |
瑞智芯 只做原装 |
3000 |
MGV12N120D芯片相关品牌
MGV12N120D规格书下载地址
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MGV12N120D数据表相关新闻
MGSF1N03LT1G
进口代理
2022-9-8MGSF1N02LT1G ON
MGSF1N02LT1GON
2020-9-18MI-271-MX，MI-271-MY，MI-272-MW，MI-272-MX，MI-272-MY，
MI-271-MX，MI-271-MY，MI-272-MW，MI-272-MX，MI-272-MY，
2020-3-18MHW820-2全新原装现货
可立即发货
2019-9-24MGSF1N02LT1GON30V，2.1A，N沟道SOT-23产品大量库存
MGSF1N02LT1GON30V，2.1A，N沟道SOT-23产品大量库存
2019-3-29MHCI04015-100M
MHCI04015-100M，全新原装当天发货或门市自取0755-82732291.
2019-3-28
DdatasheetPDF页码索引
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