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LH5

Surface Mount Glass Passivated High Efficiency Rectifier

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CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption:

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

16K CMOS STATIC RAM

GeneralDescription Features

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

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CMOS 16K (2K x 8) Static RAM

DESCRIPTION TheLH5116SisastaticRAMorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itoperatesatalowsupplyvoltageof3V±10. FEATURES •2,048×8bitorganization •Accesstime:1000ns(MAX.) •Low-powerconsumption: Operating:33mW(

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 256K (32K X 8) STATIC RAM

DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstimes:80/100ns(MAX.) •Low-powerconsu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

64K Static RAM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstimes:80/100ns(MAX.) •Low-powerconsu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164ASHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. Itisdesignedfor2.5to5.5Vlowvoltageoperationandwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstime:500ns(

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164AVisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime:200ns(MAX.) •Supplycurrent(MAX.): Operating:248mW 55mW(tRC,tWC=1µs) Standby:5.5

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164AVHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime:200ns(MAX.) •Supplycurrent(MAX.): Operating:90mW 29mW(tRC,tWC=1µs) Standby:3.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8K x 8) Static RAM

DESCRIPTION TheLH5164AZ8isastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime: 200ns(VCC=3.0VMAX.) •Powerconsumption: Operating: 60mW(MAX.)@3V Standby(to

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K (8LX8) STATIC RAM

DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

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STATIC RAM

GeneralDescription LH5168VTisastaticRAMorganizedas8,192wordx8bitfabricatedwithaCMOSsilicongateprocess.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

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64K Static RAM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

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CMOS 1M (128K x 8) Static Ram

DESCRIPTION TheLH51BV1000JYisastaticRAMorganizedas131,072×8bitswhichprovideslowpowerstandbymode.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •Accesstime:70ns(MAX.) •Currentconsumption: Operating:30mA(MAX.) 5mA(MAX.)(tRC,tWC=1µ

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

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CMOS 64K x 18 Static RAM

FUNCTIONALDESCRIPTION TheLH521028isahigh-speed1,179,648-bitCMOSSRAMorganizedas64K×18.Afast,efficientdesignisobtainedwithaCMOSperipheryandamatrixconstructedwithpolysiliconloadmemorycells.TheLH521028isavailableinacompact52-PinPLCC,whichalongwiththesixp

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K x 18 Static RAM

FUNCTIONALDESCRIPTION TheLH521028isahigh-speed1,179,648-bitCMOSSRAMorganizedas64K×18.Afast,efficientdesignisobtainedwithaCMOSperipheryandamatrixconstructedwithpolysiliconloadmemorycells.TheLH521028isavailableinacompact52-PinPLCC,whichalongwiththesix

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

CMOS 64K X 4 STATIC RAM

FEATURES

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

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CMOS 256K (32K x 8) Static RAM

DESCRIPTION TheLH52256CisaStaticRAMorganizedas32,768×8bitswhichprovideslow-powerstandbymode.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •32,768×8bitorganization •Accesstime:70ns(MAX.) •Supplycurrent: Operating:45mA(MAX.) 10

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

SHARP

LH5产品属性

  • 类型

    描述

  • 型号

    LH5

  • 制造商

    Thomas & Betts

  • 功能描述

    1/2" NPT BLACK CORD GRIP

  • 制造商

    Thomas & Betts

  • 功能描述

    1/2 NPT BLACK CORD GRIP

更新时间:2024-4-29 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SHARP ELECTRONICS
23+
717
全新原装,有询必回
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2015+
DIP18
19889
一级代理原装现货,特价热卖!
23+
N/A
89950
正品授权货源可靠
LIGITEK
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
SHARP
23+
QFP100
4500
全新原装、诚信经营、公司现货销售!
SANYODENKI
20+
SOP24
6588
SHARP
2020+
SOP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SHARP
23+
DIP32
13
原装现货 假一赔十
SHARP/夏普
22+
TQFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
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20+
QFP
500
样品可出,优势库存欢迎实单

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