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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
LH5 | Surface Mount Glass Passivated High Efficiency Rectifier 文件:188.39 Kbytes Page:4 Pages | Good-Ark Good-Ark | ||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116/HarestaticRAMsorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itfeatureshighspeedaccessinreadmodeusingoutputenable(tOE). FEATURES •2,048×8bitorganization •Accesstime:100ns(MAX.) •Powerconsumption: | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
16K CMOS STATIC RAM GeneralDescription Features | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 16K (2K x 8) Static RAM DESCRIPTION TheLH5116SisastaticRAMorganizedas2,048×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology.Itoperatesatalowsupplyvoltageof3V±10. FEATURES •2,048×8bitorganization •Accesstime:1000ns(MAX.) •Low-powerconsumption: Operating:33mW( | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 256K (32K X 8) STATIC RAM DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 256K (32K X 8) STATIC RAM DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 256K (32K X 8) STATIC RAM DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 256K (32K X 8) STATIC RAM DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 256K (32K X 8) STATIC RAM DESCRIPTION TheLH51256Lisa256KbitstaticRAMorganizedas32,768x8bitswhichprovideslow-powerstandbymode,Itisfabricatedusingsilicon-gateCMOSprocesstechnology. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8K x 8) Static RAM DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstimes:80/100ns(MAX.) •Low-powerconsu | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
64K Static RAM
| SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8K x 8) Static RAM DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstimes:80/100ns(MAX.) •Low-powerconsu | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8K x 8) Static RAM DESCRIPTION TheLH5164ASHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. Itisdesignedfor2.5to5.5Vlowvoltageoperationandwidetemperaturerangefrom-40to+85°C. FEATURES •8,192×8bitorganization •Accesstime:500ns( | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8K x 8) Static RAM DESCRIPTION TheLH5164AVisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime:200ns(MAX.) •Supplycurrent(MAX.): Operating:248mW 55mW(tRC,tWC=1µs) Standby:5.5 | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8K x 8) Static RAM DESCRIPTION TheLH5164AVHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime:200ns(MAX.) •Supplycurrent(MAX.): Operating:90mW 29mW(tRC,tWC=1µs) Standby:3. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8K x 8) Static RAM DESCRIPTION TheLH5164AZ8isastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •8,192×8bitorganization •Accesstime: 200ns(VCC=3.0VMAX.) •Powerconsumption: Operating: 60mW(MAX.)@3V Standby(to | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K (8LX8) STATIC RAM DESCRIPTION TheLH5168isastaticRAMorganizedas8,192x8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5168Hisdesignedforwidetemperaturerangefrom-40to+85°C. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
STATIC RAM GeneralDescription LH5168VTisastaticRAMorganizedas8,192wordx8bitfabricatedwithaCMOSsilicongateprocess. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
64K Static RAM
| SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 1M (128K x 8) Static Ram DESCRIPTION TheLH51BV1000JYisastaticRAMorganizedas131,072×8bitswhichprovideslowpowerstandbymode.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •Accesstime:70ns(MAX.) •Currentconsumption: Operating:30mA(MAX.) 5mA(MAX.)(tRC,tWC=1µ | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K x 18 Static RAM FUNCTIONALDESCRIPTION TheLH521028isahigh-speed1,179,648-bitCMOSSRAMorganizedas64K×18.Afast,efficientdesignisobtainedwithaCMOSperipheryandamatrixconstructedwithpolysiliconloadmemorycells.TheLH521028isavailableinacompact52-PinPLCC,whichalongwiththesixp | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K x 18 Static RAM FUNCTIONALDESCRIPTION TheLH521028isahigh-speed1,179,648-bitCMOSSRAMorganizedas64K×18.Afast,efficientdesignisobtainedwithaCMOSperipheryandamatrixconstructedwithpolysiliconloadmemorycells.TheLH521028isavailableinacompact52-PinPLCC,whichalongwiththesix | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 64K X 4 STATIC RAM FEATURES | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
CMOS 256K (32K x 8) Static RAM DESCRIPTION TheLH52256CisaStaticRAMorganizedas32,768×8bitswhichprovideslow-powerstandbymode.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES •32,768×8bitorganization •Accesstime:70ns(MAX.) •Supplycurrent: Operating:45mA(MAX.) 10 | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) |
LH5产品属性
- 类型
描述
- 型号
LH5
- 制造商
Thomas & Betts
- 功能描述
1/2" NPT BLACK CORD GRIP
- 制造商
Thomas & Betts
- 功能描述
1/2 NPT BLACK CORD GRIP
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SHARP ELECTRONICS |
23+ |
717 |
全新原装,有询必回 |
||||
SHARP |
2015+ |
DIP18 |
19889 |
一级代理原装现货,特价热卖! |
|||
23+ |
N/A |
89950 |
正品授权货源可靠 |
||||
LIGITEK |
20+ |
LED |
83000 |
LED原装优势主营型号-可开原型号增税票 |
|||
SHARP |
23+ |
QFP100 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
SANYODENKI |
20+ |
SOP24 |
6588 |
||||
SHARP |
2020+ |
SOP |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SHARP |
23+ |
DIP32 |
13 |
原装现货 假一赔十 |
|||
SHARP/夏普 |
22+ |
TQFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SHARP |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
LH5规格书下载地址
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LH5数据表相关新闻
LFXTAL003320BULK
优势库存
2022-8-2LHA-1H+
LHA-1H+
2021-6-30LI10768T104HB3001 本公司只做原装正品,欢迎新老客户的支持。
做的是诚信,卖的是良心。
2021-1-17LI48480T040HA3004 本公司只做原装正品,欢迎新老客户的支持。
做的是诚信,卖的是良心。
2021-1-17LGA676-P1Q2-24-Z 发光二极管 十年IC,只做原装。
LGA676-P1Q2-24-Z 十年IC,只做原装。
2020-10-15LH0002H/883,LH0002H-MIL,LH0005AH,LH0005AH/883B,LH0005CH,LH0005H/883,LH0020CG,ELEX14308F,ELH0032CG,ELH0101AK/883B,ELLI432,ELLS100,ELM7S32EL,ELM9727CBA-S,ELMOS10101C,ELMOS71102A,ELT0
LH0002H/883,LH0002H-MIL,LH0005AH,LH0005AH/883B,LH0005CH,LH0005H/883,LH0020CG,ELEX14308F,ELH0032CG,ELH0101AK/883B,ELLI432,ELLS100,ELM7S32EL,ELM9727CBA-S,ELMOS10101C,ELMOS71102A,ELT0
2019-12-25
DdatasheetPDF页码索引
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