型号 功能描述 生产厂家&企业 LOGO 操作
K4H510838G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838G

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung Group

三星三星半导体

Samsung

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung Group

三星三星半导体

Samsung

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

文件:392.89 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件:353.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件:353.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4H510838G产品属性

  • 类型

    描述

  • 型号

    K4H510838G

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    Consumer Memory

更新时间:2024-6-4 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2016+
TSOP
5000
全新原装现货,只售原装,假一赔十!
SAMSUNG
2020+
TSOP66
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SAMSUNG/三星
20+
TSOP66
35830
原装优势主营型号-可开原型号增税票
SAMSUNG
21+
TSOP66
8000
原装现货。假一赔十
SAMSUNG
1844+
TSOP
6528
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG
23+
NA
3230
航宇科工半导体-中国航天科工集团战略合作伙伴!
SAMSUNG
23+
FBGA
20000
原厂原装正品现货
SAMSUNG
23+
TSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
SAMSUNG/三星
23+
TSSOP66
9990
原装正品,支持实单
SAMSUNG
20+
tsop
2960
诚信交易大量库存现货

K4H510838G芯片相关品牌

  • CHENDA
  • DIGITRON
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • SICK
  • SKYWORKS
  • TAK_CHEONG
  • TDK
  • TOCOS

K4H510838G数据表相关新闻