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位置：首页 > IC中文资料第886页 > K4E

K4E价格

参考价格：￥0.0000

型号：K4E160411C-BC60 品牌：Samsung 备注：这里有K4E多少钱，2024年最近7天走势，今日出价，今日竞价，K4E批发/采购报价，K4E行情走势销售排行榜，K4E报价。
型号 功能描述 生产厂家&企业 LOGO 操作
K4E151611

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5

SamsungSamsung Group

三星三星半导体

Samsung
K4E151611D

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5

SamsungSamsung Group

三星三星半导体

Samsung
K4E151612D

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5

SamsungSamsung Group

三星三星半导体

Samsung
K4E160411D

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4.194,304x4bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E160412D

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4.194,304x4bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E160811D

2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof2,097,152x8bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E160812D

2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof2,097,152x8bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E170411D

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4.194,304x4bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E170412D

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4.194,304x4bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E170811D

2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof2,097,152x8bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E170812D

2M x 8Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof2,097,152x8bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(2KRef.or4KRef.),accesstime(-50or-60

SamsungSamsung Group

三星三星半导体

Samsung
K4E171611D

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5

SamsungSamsung Group

三星三星半导体

Samsung
K4E171612D

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5

SamsungSamsung Group

三星三星半导体

Samsung
K4E2E304EE-AGCE

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung Group

三星三星半导体

Samsung
K4E4E324EE-EGCE

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung Group

三星三星半导体

Samsung
K4E640411D-JC50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-50,or-60),packagetype(SOJorTSOPII)areoptionalfeaturesofth

SamsungSamsung Group

三星三星半导体

Samsung
K4E640411D-JC60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-50,or-60),packagetype(SOJorTSOPII)areoptionalfeaturesofth

SamsungSamsung Group

三星三星半导体

Samsung
K4E640411D-TC50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-50,or-60),packagetype(SOJorTSOPII)areoptionalfeaturesofth

SamsungSamsung Group

三星三星半导体

Samsung
K4E640411D-TC60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-50,or-60),packagetype(SOJorTSOPII)areoptionalfeaturesofth

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412D

16M x 4bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-JI45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-JI50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-JI60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-JP45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-JP50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-JP60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-TI45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-TI50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-TI60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-TP45

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-TP50

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640412E-TP60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Thisisafamilyof16,777,216x4bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfeaturesoft

SamsungSamsung Group

三星三星半导体

Samsung
K4E640812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung Group

三星三星半导体

Samsung
K4E640812C

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung Group

三星三星半导体

Samsung
K4E640812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung Group

三星三星半导体

Samsung
K4E640812E-JC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung Group

三星三星半导体

Samsung
K4E640812E-TC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung Group

三星三星半导体

Samsung
K4E641611D-TC50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-50or-60)areoptionalfeaturesofthisfamily.Allofthisfamilyha

SamsungSamsung Group

三星三星半导体

Samsung
K4E641611D-TC60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-50or-60)areoptionalfeaturesofthisfamily.Allofthisfamilyha

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612B

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612B-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612B-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TL45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TL50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TL60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612D

CMOS DRAM

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

SamsungSamsung Group

三星三星半导体

Samsung

K4E产品属性

  • 类型

    描述

  • 型号

    K4E

  • 制造商

    NEC TOKIN Corporation

  • 功能描述

    K4E series 500x160 mm 0.3 mm Thickness 10 GHz Frequency EMI Flex Suppressor

K4E供应商更多...

更新时间：2024-6-4 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
K4E151611D-TC60
SAMSUNG
2016+
TSOP
8880
只做原装,假一罚十,公司可开17%增值税发票!
询价
上海意淼电子科技有限公司
K4E151611D-JC60
SAMSUNG
23+
SOJ42
20000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
K4E151611D-TC50
SAMSUNG
2020+
TSOP44
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市华睿芯科技有限公司
K4E151611D-TC60
SAMSUNG
23+
TSOP44
20000
原厂原装正品现货
询价
深圳市博浩通科技有限公司
K4E151611D-TC60
SAMSUNG
23+
TSOP
1500
专业优势供应
询价
易创佳业科技（深圳）有限公司
K4E151611D-TC60
SAMSUNG/三星
23+
TSOP44
9990
原装正品，支持实单
询价
深圳市富芯乐电子科技有限公司
K4E151611D-JC60
SAMSUNG?
22+
SOJ?
5000
全新原装现货特价..
询价
深圳市力拓辉电子有限公司
K4E151611D-JC60
SAMSUNG
22+
SOJ-42
5000
只做原装,假一赔十 15118075546
询价
深圳市美思瑞电子科技有限公司
K4E151611D-JC60
SUMSANG
22+
SOJ42
12245
现货,原厂原装假一罚十!
询价
上海专毅电子科技有限公司
K4E151611D-JC60
SAMSUNG
17+
SOJ42
9988
只做原装进口,自己库存
询价

K4E芯片相关品牌

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  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • SICK
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  • TAK_CHEONG
  • TDK
  • TOCOS

K4E规格书下载地址

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