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位置：首页 > IC中文资料第5686页 > K4E641612C

型号 功能描述 生产厂家&企业 LOGO 操作
K4E641612C

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-45

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-50

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-60

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T45

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T50

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-T60

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC45

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC50

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TC60

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TL45

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TL50

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612C-TL60

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612B

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612B-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung
K4E641612B-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung Group

三星三星半导体

Samsung

K4E641612C产品属性

  • 类型

    描述

  • 型号

    K4E641612C

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    4M x 16bit CMOS Dynamic RAM with Extended Data Out

K4E641612C供应商更多...

更新时间：2024-5-9 22:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市环球伟业电子有限公司
K4E641612C-TC50
SAMSUNG/三星
21+
TSOP
11600
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市益百分电子有限公司
K4E641612C-TC60
SAMSUNG
TSOP50
0202+
667
全新原装进口自己库存优势
询价
深圳市威雅利发展有限公司
K4E641612C-GL60T00
SAMSUNG
00+
BGA
1970
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市能元时代电子有限公司
K4E641612C-GL60T00
SAMSUNG
23+
BGA
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市美思瑞电子科技有限公司
K4E641612C-TC60
SAMSUNG/三星
22+
TSOP
12245
现货,原厂原装假一罚十!
询价
深圳市博浩通科技有限公司
K4E641612C-GL60T00
SAM
23+
BGA
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
深圳市得捷芯城科技有限公司
K4E641612C-TC50
SAMSUNG/三星
23+
NA/
10
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市维尔达电子有限公司
K4E641612C-TC50
SAMSUNG
2023+
TSOP50
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市芯诚实创科技有限公司
K4E641612C-TC60
SAMSUNG
2022
TSOP
2808
全新原装现货
询价
瀚佳科技(深圳)有限公司
K4E641612C-TC50
SAMSUNG/三星
19+
9850
公司原装现货/随时可以发货
询价

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