型号 功能描述 生产厂家&企业 LOGO 操作
K4D263238G-VC

128MbitGDDRSDRAM

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

Samsung

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

Samsung

128MbitGDDRSDRAM

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

Samsung

K4D263238G-VC产品属性

  • 类型

    描述

  • 型号

    K4D263238G-VC

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mbit GDDR SDRAM

更新时间:2024-4-29 22:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAM
23+
NA
20000
全新原装假一赔十
SAMSUNG
2020+
BGA144
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SAMSUNG/三星
24+
BGA
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
SAMSUNG/三星
23+
NA/
3305
原装现货,当天可交货,原型号开票
SAMSUNG
23+
BGA
20000
原厂原装正品现货
SAMSUNG
23+
标准封装
18000
SAMSUNG/三星
2046+
9852
只做原装正品现货!或订货假一赔十!
SAMSUNG
23+
FBGA
28000
原装正品
SAMSUNG
2020+
BGA
350000
100%进口原装正品公司现货库存
SAMSUNG/三星
06+
NA
880000
明嘉莱只做原装正品现货

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