位置：首页 > IC中文资料第6207页 > K4D263238D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4D263238D | 1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 |  |   |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | | | |
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | | | |
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | | |
K4D263238D产品属性
- 类型
描述
- 型号
K4D263238D
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2020+ |
QFP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SAMSUNG |
23+ |
标准封装 |
18000 |
||||
SAMSUNG |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
|||
SAMSUNG/三星 |
23+ |
QFP |
89630 |
当天发货全新原装现货 |
|||
SAMSUNG |
22+ |
QFP |
6980 |
原装现货,可开13%税票 |
|||
SAMSUNG/三星 |
18+ |
QFP |
16066 |
全新原装现货,可出样品,可开增值税发票 |
|||
SAMSUNG/三星 |
21+ |
QFP |
11600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG |
1815+ |
QFP |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
21+ |
QFP |
12588 |
原装正品,自己库存 假一罚十 |
||||
TSOP |
22+ |
SOT23-8 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
K4D263238D芯片相关品牌
K4D263238D规格书下载地址
K4D263238D参数引脚图相关
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K4B4G1646E-BYMA品牌:SAMSUNG数量:46639批号:20+封装:BGA
2020-3-23
DdatasheetPDF页码索引
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