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IXBX75N170价格
参考价格：￥227.7300
型号：IXBX75N170 品牌：IXYS 备注：这里有IXBX75N170多少钱，2024年最近7天走势，今日出价，今日竞价，IXBX75N170批发/采购报价，IXBX75N170行情走势销售排行榜，IXBX75N170报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBX75N170 | BiMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackages •HighBlockingVoltage •HighCurrentHandlingCapability •Anti-ParallelDiode Advantages •HighPowerDensity •LowGateDriveRequirement •IntergratedDiodeCanBeUsedforProtection Applications •CapacitorDischarge •ACSwitches •Swi | IXYS IXYS Integrated Circuits Division |  |   |
IXBX75N170 | BiMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackages •HighBlockingVoltage •HighCurrentHandlingCapability •Anti-ParallelDiode Advantages •HighPowerDensity •LowGateDriveRequirement •IntergratedDiodeCanBeUsedforProtection Applications •CapacitorDischarge •ACSwitches •Swi | IXYS IXYS Integrated Circuits Division | | |
IXBX75N170 | 封装/外壳：TO-247-3 变式 包装：管件 描述：IGBT 1700V 200A 1040W PLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
BiMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackages •HighBlockingVoltage •FastSwitching •HighCurrentHandlingCapability •Anti-ParallelDiode Advantages •HighPowerDensity •LowGateDriveRequirement •IntergratedDiodeCanBeUsedforProtection Applications •Switched-ModeandReson | IXYS IXYS Integrated Circuits Division | | | |
封装/外壳：TO-247-3 变式 包装：卷带（TR） 描述：IGBT 1700V 110A 1040W PLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | | |
BiMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackages •HighBlockingVoltage •HighCurrentHandlingCapability •Anti-ParallelDiode Advantages •HighPowerDensity •LowGateDriveRequirement •IntergratedDiodeCanBeUsedforProtection Applications •CapacitorDischarge •ACSwitches •Swi | IXYS IXYS Integrated Circuits Division | | | |
BiMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackages •HighBlockingVoltage •FastSwitching •HighCurrentHandlingCapability •Anti-ParallelDiode Advantages •HighPowerDensity •LowGateDriveRequirement •IntergratedDiodeCanBeUsedforProtection Applications •Switched-ModeandReson | IXYS IXYS Integrated Circuits Division | | | |
BiMOSFETTMMonolithicBipolarMOSTransistor 文件：180.58 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor 文件：91.88 Kbytes Page：2 Pages | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
PLUS247 |
6000 |
原装正品，支持实单 |
|||
23+ |
N/A |
36500 |
正品授权货源可靠 |
||||
IXYS |
23+ |
PLUS247 |
12300 |
全新原装真实库存含13点增值税票! |
|||
SHARP/夏普 |
22+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
2322+ |
NA |
33220 |
无敌价格 主销品牌 正规渠道订货 免费送样!!! |
||||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
SHARP/夏普 |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
1948+ |
TQFP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
IXYS |
22+ |
TO-247 |
432 |
||||
IXYS |
22+ |
PLUS247?3 |
9000 |
原厂渠道,现货配单 |
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DdatasheetPDF页码索引
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