ISL9014价格

参考价格:¥8.0619

型号:ISL9014AIRFCZ 品牌:Intersil 备注:这里有ISL9014多少钱,2024年最近7天走势,今日出价,今日竞价,ISL9014批发/采购报价,ISL9014行情走势销售排行榜,ISL9014报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ISL9014

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9014

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
ISL9014

DualLDOwithLowNoise,LowIQ,andHighPSRR

文件:220.46 Kbytes Page:11 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

ISL9014产品属性

  • 类型

    描述

  • 型号

    ISL9014

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    Dual LDO with Low Noise, Low IQ, and High PSRR

更新时间:2024-5-16 18:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
22+
NA
12680
XICOR
23+
DFN10(3x3)
6000
IDT/RENESAS
22+
DFN
24500
瑞萨全系列在售
INTERSIL
17+
QFN10
1500
决对房间现货
INTERSIL
QFN
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
INTERSIL
23+
原厂原封装
12000
正迈科技☑原装☑进口☑诚信大量原装
INTERSIL
23+
DFN
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
INTERSIL
22+
10-DFN
4500
全新原装品牌专营
INTERSIL
2020+
原厂封装
350000
100%进口原装正品公司现货库存
INTERSIL
23+
DFN-10
20000
原装正品 欢迎咨询

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