ISL9014A价格

参考价格:¥8.0619

型号:ISL9014AIRFCZ 品牌:Intersil 备注:这里有ISL9014A多少钱,2024年最近7天走势,今日出价,今日竞价,ISL9014A批发/采购报价,ISL9014A行情走势销售排行榜,ISL9014A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ISL9014A

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9014A

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
ISL9014A

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9014A

Providinghigh-performancesolutionsforeverylinkinthesignalchain

文件:9.95425 Mbytes Page:44 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9014AisahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

ISL9014AisahighperformancedualLDOcapableof sourcing300mAcurrentfrombothoutputs.Thedevicehasa lowstandbycurrentandhigh-PSRRandisstablewithoutput capacitanceof1µFto10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacitorfor adjustinganoi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

ISL9014A产品属性

  • 类型

    描述

  • 型号

    ISL9014A

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    Dual LDO with Low Noise, Low IQ, and High PSRR

更新时间:2024-5-16 18:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
22+
NA
12680
XICOR
23+
DFN10(3x3)
6000
IDT/RENESAS
22+
DFN
24500
瑞萨全系列在售
INTERSIL
2018+
NA
350000
原装订货6-8周专注经营十五年
INTERSIL
23+
原厂原封装
12000
正迈科技☑原装☑进口☑诚信大量原装
RENESAS/瑞萨
21+
NA
6000
绝对公司现货,不止网上数量!原装正品,假一赔十!
Intersil
23+
10DFN
9000
原装正品,支持实单
RENESAS ELECTRONICS
22+
SMD
518000
明嘉莱只做原装正品现货
RENESAS/瑞萨
21+
NA
9800
只做原装正品假一赔十!正规渠道订货!
INTERSIL
2023+
NA
5951

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ISL9014A数据表相关新闻