ISL9011价格

参考价格:¥6.2158

型号:ISL9011AIRBBZ 品牌:Intersil 备注:这里有ISL9011多少钱,2024年最近7天走势,今日出价,今日竞价,ISL9011批发/采购报价,ISL9011行情走势销售排行榜,ISL9011报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ISL9011

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011isahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefer

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
ISL9011

DualLDOwithLowNoise,LowIQ,andHighPSRR

文件:227.58 Kbytes Page:11 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

ISL9011产品属性

  • 类型

    描述

  • 型号

    ISL9011

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    Dual LDO with Low Noise, Low IQ, and High PSRR

更新时间:2024-6-7 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
XICOR
23+
DFN10(3x3)
6000
诚信服务,绝对原装原盘
INTERSIL
19+
QFN10
1987
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INTERSIL
21+
QFN10
10000
全新原装 公司现货 价格优
Renesas Electronics America In
21+
10-VFDFN 裸露焊盘
6000
正规渠道/品质保证/原装正品现货
只做原装
21+
QFN
36520
一级代理/放心采购
INTERSIL
0601+
QFN10
2000
进口原装现货询价
INTERSIL
22+
10-DFN
4500
全新原装品牌专营
RENESAS(瑞萨)/IDT
23+
DFN10(3x3)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
INTERSIL
23+
NA/
5237
原装现货,当天可交货,原型号开票
INTERSIL
17+
QFN10
1500
决对房间现货

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