ISL9011A价格

参考价格:¥6.2158

型号:ISL9011AIRBBZ 品牌:Intersil 备注:这里有ISL9011A多少钱,2024年最近7天走势,今日出价,今日竞价,ISL9011A批发/采购报价,ISL9011A行情走势销售排行榜,ISL9011A报价。
型号 功能描述 生产厂家&企业 LOGO 操作
ISL9011A

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9011A

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
ISL9011A

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
ISL9011A

Providinghigh-performancesolutionsforeverylinkinthesignalchain

文件:9.95425 Mbytes Page:44 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Arefe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

DualLDOwithLowNoise,LowIQandHighPSRR

ISL9011AisahighperformancedualLDOcapableof sourcing150mAcurrentfromChannel1and300mAfrom Channel2.Thedevicehasalowstandbycurrentand high-PSRRandisstablewithoutputcapacitanceof1µFto 10µFwithESRofupto200mΩ. Areferencebypasspinallowsanexternalcapacit

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

DualLDOwithLowNoise,LowIQ,andHighPSRR

DualLDOwithLowNoise,LowIQ,andHighPSRR ISL9011AisahighperformancedualLDOcapableofsourcing150mAcurrentfromChannel1and300mAfromChannel2.ThedevicehasalowstandbycurrentandhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Arefe

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

ISL9011A产品属性

  • 类型

    描述

  • 型号

    ISL9011A

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    Dual LDO with Low Noise, Low IQ, and High PSRR

更新时间:2024-6-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
23+
NA/
5237
原装现货,当天可交货,原型号开票
INTERSIL
19+
QFN10
1987
一级代理,专注军工、汽车、医疗、工业、新能源、电力
XICOR
23+
DFN10(3x3)
6000
诚信服务,绝对原装原盘
INTERSIL
20+
SMD
880000
明嘉莱只做原装正品现货
INTERSIL
23+
QFN10
90000
只做原厂渠道价格优势可提供技术支持
INTERSIL
QFN10
540010
自己库存,有更多量
RENESAS-瑞萨.
24+25+/26+27+
DFN-10
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
INTERSIL
22+
QFN10
57455
郑重承诺只做原装进口货
INTERSIL
23+
QFN10
20000
原装正品 欢迎咨询
RENESAS/瑞萨
23+
DFN-10
60000
全新、原装

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